A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors

Electron trap creation under conditions of hot-electron stress (i.e., stress at V/sub d/=V/sub g/) is examined. It is shown that a relationship exists linking lifetime to the injected gate current and drain current, offering a lifetime prediction method for these types of traps. Comparing this type of damage to interface trap (N/sub it/) creation, it is found that larger energies (approximately 1.5 times that for N/sub it/) are required to generate this defect. It is shown that an extrapolation technique can be used to obtain gate currents at working circuit voltages, extending the prediction of lifetimes for oxide trap creation to low voltages.<>