Title :
Dependence of Magneto-Electrical Properties of Mn-Doped ZnO Films Deposited Under Various Gas Ambience States
Author :
Fu, Chao-Ming ; Kuo, Ming-Feng ; Hu, Yu-Min ; Liu, Te-Kuang ; Chang, Chia-Ou ; Chou, Chan-Shin
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2010 12:00:00 AM
Abstract :
In this work we have carried out a systematic study of the dependence of magneto-electrical properties of Mn-doped ZnO thin films deposited in various gas (Ar, Ar+N2, and Ar+O2) ambiences. The magneto-impedance spectra of the Mn-doped ZnO thin films have been analyzed using equivalent circuits composed of resistors and capacitors. The results show that both electrical conductivity and dielectric relaxation of grains and grain boundaries contribute to the magneto-dynamics of the polycrystalline film. Further analysis of the electro-magnetic parameters suggests that the oxide-based magnetic semiconductors may applicable to high frequency electro-magnetic devices.
Keywords :
II-VI semiconductors; dielectric relaxation; electrical conductivity; grain boundaries; magnetic thin films; manganese; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; ZnO:Mn; dielectric relaxation; electrical conductivity; gas ambience state; grain boundaries; high frequency electromagnetic device; magneto-electrical properties; magneto-impedance spectra; magnetodynamics; oxide-based magnetic semiconductors; polycrystalline film; thin film deposition; Argon; Circuit analysis; Dielectric thin films; Magnetic analysis; Magnetic properties; Magnetic semiconductors; Semiconductor thin films; Sputtering; Thin film circuits; Zinc oxide; Impedance spectroscopy; Mn-doped ZnO;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2043505
