Title :
A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology
Author :
He, Zhongxia ; Swahn, Thomas ; Li, Yinggang ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
5/1/2012 12:00:00 AM
Abstract :
A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.
Keywords :
III-V semiconductors; amplifiers; amplitude shift keying; field effect transistors; flip-flops; gallium arsenide; heterojunction bipolar transistors; modulators; network topology; OOK modulator; amplifier structure; bipolar technology; bit rate 14 Gbit/s; carrier frequency; field effect transistor; gallium arsenide HBT technology; heterojunction bipolar transistors IC process; latch structure; modulator circuit; on-/off- keying modulator; topology; Frequency measurement; Frequency modulation; Heterojunction bipolar transistors; Latches; Loss measurement; Switches; Emitter-coupled pair; GaAs heterojunction bipolar transistor (HBT); MMIC; RF Switch; latch; on-/off- keying (OOK) modulator; short switch transient time;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2192418
