Title :
75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs
Author :
Mathew, T. ; Kim, H.J. ; Scott, D. ; Jaganathan, S. ; Krishnan, S. ; Wei, Y. ; Urteaga, M. ; Long, S. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/24/2001 12:00:00 AM
Abstract :
A 75 GHz static frequency divider in InAlAs/InGaAs transferred-substrate heterojunction bipolar transistor (HBT) technology is reported. This is the highest reported frequency of operation for a static frequency divider. The circuit has 60 transistors and dissipates 800 mW. The divider was operated at a clock frequency of 5.0 to 75 GHz
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; 5 to 75 GHz; 800 mW; ECL static frequency divider; InAlAs-InGaAs; InAlAs/InGaAs HBTs; heterojunction bipolar transistor; transferred-substrate HBT technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010465
