Title :
12 μm long edge-emitting quantum-dot laser
Author :
Rennon, S. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Wurzburg Univ., Germany
fDate :
5/24/2001 12:00:00 AM
Abstract :
Highly reflecting Bragg mirrors in combination with GaInAs/AlGaAs laser structures with two layers of self-organised GaInAs quantum-dots are used to realise CW-operating edge-emitting microlasers with cavity lengths down to 12 μm. Owing to the large spacing of the longitudinal modes of 8.2 nm for 12 μm long lasers, quasi-singlemode operation is obtained
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser beams; laser mirrors; laser modes; microcavity lasers; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 12 mum; 8.2 nm; CW-operating edge-emitting microlasers; GaInAs; GaInAs-AlGaAs; GaInAs/AlGaAs laser structures; cavity lengths; edge-emitting quantum-dot laser; highly reflecting Bragg mirrors; longitudinal modes; quantum-dot laser; quasi-singlemode operation; self-organised GaInAs quantum-dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010488
