Title :
A Study on the Sign Inversion Behavior of Organic Magnetoresistance
Author :
Tianyou Zhang ; Junqing Zhao ; Xingwu Yan ; Qiming Peng ; Gang Fu
Author_Institution :
Sch. of Sci., Shandong Jianzhu Univ., Jinan, China
Abstract :
We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.
Keywords :
magnetoresistance; organic semiconductors; semiconductor thin films; OMR sign inversion behavior; hyperfine field; magnetic field modulated bipolaron mechanism; organic magnetoresistance; organic thin-film devices; percolation theory; space-charge-limited current; Magnetic devices; Magnetic domains; Magnetic semiconductors; Magnetoresistance; Magnetosphere; Organic light emitting diodes; Saturation magnetization; Hopping transport; organic magnetoresistance (OMR); percolation theory; space-charge-limited current (SCLC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2237540
