DocumentCode
1498410
Title
Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors
Author
Goiffon, V. ; Magnan, P. ; Martin-Gonthier, P. ; Virmontois, C. ; Gaillardin, M.
Author_Institution
ISAE, Univ. de Toulouse, Toulouse, France
Volume
32
Issue
6
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
773
Lastpage
775
Abstract
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.
Keywords
CMOS image sensors; CMOS image sensors; dark current; dedicated RTS detection technique; integration time; ionizing radiations; meta-stable Shockley-Read-Hall generation mechanism; oxide defects; oxide interfaces; photodiode bias; radiation dose; random telegraph signal; CMOS image sensors; Dark current; Ionizing radiation; Logic gates; Photodiodes; Pixel; Radiation effects; Active pixel sensors (APS); CMOS image sensors (CIS); dark current; interface states; random telegraph signal (RTS); shallow trench isolation (STI); total ionizing dose (TID);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2125940
Filename
5752812
Link To Document