Title :
Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors
Author :
Goiffon, V. ; Magnan, P. ; Martin-Gonthier, P. ; Virmontois, C. ; Gaillardin, M.
Author_Institution :
ISAE, Univ. de Toulouse, Toulouse, France
fDate :
6/1/2011 12:00:00 AM
Abstract :
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.
Keywords :
CMOS image sensors; CMOS image sensors; dark current; dedicated RTS detection technique; integration time; ionizing radiations; meta-stable Shockley-Read-Hall generation mechanism; oxide defects; oxide interfaces; photodiode bias; radiation dose; random telegraph signal; CMOS image sensors; Dark current; Ionizing radiation; Logic gates; Photodiodes; Pixel; Radiation effects; Active pixel sensors (APS); CMOS image sensors (CIS); dark current; interface states; random telegraph signal (RTS); shallow trench isolation (STI); total ionizing dose (TID);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2125940
