Title :
Generation of mobile hydrogenous ions in gate oxide and their potential applications
Author :
Zhao, C.Z. ; Zhang, J.F. ; Groeseneken, G. ; Degraeve, R. ; Ellis, J.N. ; Beech, C.D.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., UK
fDate :
5/24/2001 12:00:00 AM
Abstract :
It has been reported that mobile hydrogenous ions can be formed in the oxide after exposure to temperatures of 1100-1300°C for 30 min. It is investigated whether these ions can be created in a standard MOSFET fabricated by a submicron CMOS process, without using such a high thermal budget. The potential use of a MOSFET as a non-volatile memory device is explored and problems are highlighted
Keywords :
CMOS memory circuits; MOSFET; annealing; hydrogen ions; 1100 to 1300 C; 30 min; MOSFET; gate oxide; hydrogen annealing; mobile hydrogenous ion generation; nonvolatile memory device; submicron CMOS process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010475
