Photo-Induced Precession of Magnetization in (Ga,Mn)As Microbars

Author

Suda, K. ; Kobayashi, S. ; Aoyama, J. ; Munekata, H.

Author_Institution

Imaging Sci. & Eng. Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

2421

Lastpage

2423

Abstract

Photo-induced precession of magnetization in (Ga,Mn) As microbars has been studied experimentally. It has been found that effective magnetic fields decrease to great extent in the microbars. The damping appears not to be affected severely, at least within the limit of microbars of micrometer size. Our findings indicate that magnetization dynamics can be controlled to some extent by patterning strained epilayers into microstructures.

Keywords

III-V semiconductors; Kerr magneto-optical effect; damping; ferromagnetic materials; gallium compounds; interface magnetism; magnetic epitaxial layers; magnetic semiconductors; magnetisation; manganese compounds; microfabrication; micromechanical devices; semiconductor epitaxial layers; (GaMn)As; damping; interface phenomena; magnetization dynamics; microbars; microstructures; optical Kerr effect; patterning strained epilayers; photo-induced precession; Magnetic field induced strain; Magnetic materials; Magnetization; Manganese; Microstructure; Optical materials; Semiconductor materials; Strain control; Temperature; Ultrafast optics; Ferromagnetic materials; interface phenomena; magnetic semiconductors; manganese compounds; optical Kerr effect; ultrafast optics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2045113

Filename

5467468