Title :
Photo-Induced Precession of Magnetization in (Ga,Mn)As Microbars
Author :
Suda, K. ; Kobayashi, S. ; Aoyama, J. ; Munekata, H.
Author_Institution :
Imaging Sci. & Eng. Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/2010 12:00:00 AM
Abstract :
Photo-induced precession of magnetization in (Ga,Mn) As microbars has been studied experimentally. It has been found that effective magnetic fields decrease to great extent in the microbars. The damping appears not to be affected severely, at least within the limit of microbars of micrometer size. Our findings indicate that magnetization dynamics can be controlled to some extent by patterning strained epilayers into microstructures.
Keywords :
III-V semiconductors; Kerr magneto-optical effect; damping; ferromagnetic materials; gallium compounds; interface magnetism; magnetic epitaxial layers; magnetic semiconductors; magnetisation; manganese compounds; microfabrication; micromechanical devices; semiconductor epitaxial layers; (GaMn)As; damping; interface phenomena; magnetization dynamics; microbars; microstructures; optical Kerr effect; patterning strained epilayers; photo-induced precession; Magnetic field induced strain; Magnetic materials; Magnetization; Manganese; Microstructure; Optical materials; Semiconductor materials; Strain control; Temperature; Ultrafast optics; Ferromagnetic materials; interface phenomena; magnetic semiconductors; manganese compounds; optical Kerr effect; ultrafast optics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2045113
