Title :
New ratio method for effective channel length and threshold voltage extraction in MOS transistors
Author :
Cretu, B. ; Boutchacha, T. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
5/24/2001 12:00:00 AM
Abstract :
A new `ratio´ method for effective channel length and threshold voltage extraction in MOS transistors is proposed. The method, which relies on the same function as that used in the well known shift and ratio procedure, enables the effective channel length and threshold voltage difference to be extracted from simple linear regression applied to a short versus long channel correlation plot of the function Y(Vg)=Id√gm (Id being the drain current and gm the transconductance). This method has successfully been applied to 0.18-0.1 μm CMOS technologies
Keywords :
CMOS integrated circuits; MOSFET; length measurement; semiconductor device measurement; voltage measurement; 0.18 to 0.1 mum; CMOS technologies; MOS transistors; drain current; effective channel length; linear regression; ratio method; short versus long channel correlation plot; threshold voltage; transconductance);
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010467
