Title :
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs
Author :
Tediosi, E. ; Borgarino, M. ; Verzellesi, G. ; Sozzi, G. ; Menozzi, R.
Author_Institution :
Dipartimento di Sci. dell´´Ingegneria, Modena Univ., Italy
fDate :
5/24/2001 12:00:00 AM
Abstract :
The gate-lag turn-off transient of as-fabricated and hot-carrier stressed power AlGaAs/GaAs HFETs is addressed by quantitatively comparing experimental data with device simulations accounting for the occupation dynamics of surface deep-acceptor traps. Gate-lag waveforms of increasingly degraded devices can be accurately simulated by suitably increasing the surface trap density
Keywords :
aluminium compounds; deep level transient spectroscopy; gallium arsenide; hole traps; hot carriers; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device reliability; surface states; transients; AlGaAs-GaAs; DLTS; degraded device; device simulations; gate-lag waveforms; hot-carrier stressing; lag turn-off transient; microwave power AlGaAs/GaAs HFETs; occupation dynamics; surface deep-acceptor traps; surface effects; surface trap density; turn-off characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010478
