Title :
Thin n-GaN films with low level of 1/f noise
Author :
Rumyantsev, S.L. ; Pala, N. ; Shur, M.S. ; Gaska, R. ; Levinshtein, M.E. ; Khan, M.Asif ; Simin, G. ; Hu, X. ; Yang, J.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
5/24/2001 12:00:00 AM
Abstract :
The authors report on the results of measurements of low frequency noise in thin (60 nm) Si-doped n-type gallium nitride (GaN) films grown on sapphire. At room temperature, the noise spectra have the form of 1/f noise with a Hooge parameter α~2×10-3. This value of α is three orders of magnitude smaller than that observed before in thin films of n-GaN
Keywords :
1/f noise; III-V semiconductors; MOCVD coatings; Schottky gate field effect transistors; gallium compounds; semiconductor device noise; semiconductor thin films; silicon; wide band gap semiconductors; 1 Hz to 100 kHz; 300 K; 60 nm; Al2O3; GaN:Si; GaN:Si films; Hooge parameter; MESFET; low frequency noise; low level 1/f noise; low pressure MOCVD; n-GaN thin films; noise spectra; relative spectral noise density; room temperature; sapphire;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010468
