DocumentCode :
1498615
Title :
SICE: design-dependent statistical interconnect corner extraction under inter/intra-die variations
Author :
Feng, Zheyun ; Li, Peng ; Ren, Zhang
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan Technol. Univ., Houghton, MI, USA
Volume :
3
Issue :
5
fYear :
2009
fDate :
10/1/2009 12:00:00 AM
Firstpage :
248
Lastpage :
258
Abstract :
While traditional worst-case corner analysis is often too pessimistic for nanometer designs, full-blown statistical circuit analysis requires significant modelling infrastructures. In this study, a design-dependent statistical interconnect corner extraction (SICE) methodology is proposed. SICE achieves a good trade-off between complexity and pessimism by extracting more than one process corners in a statistical sense, which are also design dependent. Our new approach removes the pessimism incurred in prior work while being computationally efficient. The efficiency of SICE comes from the use of parameter dimension reduction techniques. The statistical corners are further compacted by an iterative output clustering method. Numerical results show that SICE achieves up to 260X speedups over the Monte Carlo method.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit interconnections; iterative methods; statistical analysis; CMOS technologies; SICE methodology; design-dependent statistical interconnect corner extraction; full-blown statistical circuit analysis; inter-die variation; interconnect delay variations; intra-die variation; iterative output clustering method; parameter dimension reduction technique; traditional worst-case corner analysis;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2009.0040
Filename :
5285988
Link To Document :
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