DocumentCode :
1498624
Title :
Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells
Author :
Chatterjee, Indranil ; Bhuva, Bharat L. ; Wen, Shi-Jie ; Wong, Richard
Author_Institution :
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
Volume :
59
Issue :
4
fYear :
2012
Firstpage :
872
Lastpage :
879
Abstract :
Alpha particles are a critical reliability problem for advanced technologies. The critical charge (Qcrit) required to upset an SRAM cell being small, SRAMs are extremely vulnerable to the low level of ionization produced by alpha particles. This paper reports extensive tests over a wide range of technology nodes on CMOS SRAMs to study the influence of various user-controlled parameters such as operating voltage, data pattern, operating frequency and operational-mode on alpha particle induced single-event upsets rates.
Keywords :
Alpha particles; Capacitance; Error analysis; Layout; Random access memory; Transistors; Visualization; Alpha particle; SER; SRAM; multiple bit upset (MBU); single bit upset (SBU); soft error;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2188839
Filename :
6186727
Link To Document :
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