Title :
Fast 1V bootstrapped inverter suitable for standard CMOS technologies
Author :
Moisiadis, Y. ; Bouras, I. ; Efthymiou, A. ; Papadas, C.
Author_Institution :
ISD, Athens, Greece
fDate :
1/21/1999 12:00:00 AM
Abstract :
The authors propose a novel low-voltage bootstrapped inverter, designed in a standard high VT 0.35 μm CMOS technology. To enhance the switching speed of a CMOS inverter at low-voltage operation, an NMOS device is used in the pull-up section. A bootstrapping scheme is used to avoid the VTN reduction of the output swing
Keywords :
CMOS logic circuits; bootstrap circuits; logic gates; low-power electronics; 0.35 micron; 1 V; low-voltage bootstrapped inverter; pull-up section; standard CMOS technologies; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990092
