DocumentCode :
1498696
Title :
New resonant-tunneling devices with multiple negative resistance regions and high room-temperature peak-to-valley ratio
Author :
Sen, Susanta ; Capasso, Federico ; Sivco, Debbie ; Cho, Alfred Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
9
Issue :
8
fYear :
1988
Firstpage :
402
Lastpage :
404
Abstract :
A new resonant-tunneling (RT) device with multiple peaks in the current-voltage characteristics is presented. The multiple peaks are obtained by sequential quenching of resonant tunneling through the ground-state resonances of the quantum wells (QW´s) of a number of double barriers (DB´s) in series, thereby producing the peaks at nearly the same current level. Devices with three and five peaks operating at room temperature were implemented using Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As heterostructures. The current-voltage characteristics of these devices indicate peak-to-valley ratios of 5:1 at room temperature and as high as 18:1 at 77 K. These devices are useful for multiple-valued logic and applications involving reduced circuit complexity.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; negative resistance; p-n heterojunctions; tunnel diodes; GaInAs-AlInAs; circuit complexity; current-voltage characteristics; double barriers; ground-state resonances; heterostructures; high room-temperature peak-to-valley ratio; multiple negative resistance regions; multiple-valued logic; quantum wells; resonant-tunneling devices; sequential quenching; Current-voltage characteristics; Diodes; Germanium alloys; Gold; Logic circuits; Logic devices; Resonance; Resonant tunneling devices; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.758
Filename :
758
Link To Document :
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