Title :
Spin-Flipping Associated With the Antiferromagnet IrMn
Author :
Acharyya, Rakhi ; Nguyen, Hoang Yen Thi ; Pratt, W.P., Jr. ; Bass, Jack
Author_Institution :
Dept. of Phys. & Astron., Michigan State Univ., East Lansing, MI, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
We have used current-perpendicular-to-plane magnetoresistance measurements of Py-based exchange-biased spin-valves containing IrMn inserts of thickness t to estimate the spin-flipping probability of the antiferromagnet IrMn. From t=0 to t= 1 nm, we find a rapid decrease in A¿R=A(RAP - RP) , by about a factor of 50-here A is the area through which the CPP current flows, and RAP and RP are the resistances with the moments of the two Py layers oriented anti-parallel (AP) or parallel (P) to each other. We attribute this decrease to very strong spin-flipping in the IrMn/Cu interfacial region, with effective spin diffusion length l sf IrMn/Cu= 0.24 nm, only about 1 monolayer (ML). But for t from 2 to 5 nm, the decrease of A¿R with increasing IrMn thickness is much slower. The reason for this slowing is not yet clear.
Keywords :
antiferromagnetic materials; copper; exchange interactions (electron); iridium alloys; magnetic moments; magnetic multilayers; manganese alloys; spin dynamics; spin valves; IrMn-Cu; antiferromagnet; current-perpendicular-to-plane magnetoresistance measurements; exchange-biased spin-valves; interfacial region; moments; monolayer; size 0 nm to 1 nm; spin diffusion length; spin-flipping probability; Antiferromagnetic materials; Current measurement; Extraterrestrial measurements; Magnetoresistance; Niobium; Sputtering; Strips; Superconducting epitaxial layers; Temperature; Thickness measurement; Antiferromagnet; IrMn; IrMn/Cu interface; spin-flipping in IrMn;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2045348