Title :
High power CW output from low confinement asymmetric structure diode laser
Author :
Iordache, G. ; Buda, M. ; Acket, G.A. ; van de Roer, T.G. ; Kaufmann, L.M.F. ; Karouta, F. ; Jagadish, C. ; Tan, H.H.
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
1/21/1999 12:00:00 AM
Abstract :
High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm2
Keywords :
MOCVD; current density; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1 to 3 mm; 1.8 W; 4.7 A; 50 micron; asymmetric structure diode laser; confinement; continuous wave optical power; gain guided lasers; high power CW output; injection current; metal organic vapour phase epitaxy; optical trap layer; threshold current density; uncoated facet;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990078
