DocumentCode
1498850
Title
Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors
Author
Höfling, E. ; Werner, R. ; Schäfer, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ., Germany
Volume
35
Issue
2
fYear
1999
fDate
1/21/1999 12:00:00 AM
Firstpage
154
Lastpage
155
Abstract
Short-cavity edge-emitting lasers with deeply etched distributed Bragg reflectors (DBRs) of third and second order were realised by reactive ion etching on GaInAs/AlGaAs layer structures. Diffraction limited reflectivities were achieved for third order dry etched DBR mirrors. Devices with DBRs on both cavity ends allow lasing operation for cavity lengths as short as 40 μm
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; sputter etching; 40 micron; GaInAs-AlGaAs; diffraction limited reflectivity; distributed Bragg mirror; dry etching; reactive ion etching; short-cavity edge-emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990133
Filename
758029
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