• DocumentCode
    1498854
  • Title

    Strong Temperature Dependence of Magnetoresistance in Co-C Granular Thin Films

  • Author

    Tang, Ruihe ; Mizuguchi, Masaki ; Wang, Hai ; Yu, Ronghai ; Takanashi, Koki

  • Author_Institution
    Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
  • Volume
    46
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    2144
  • Lastpage
    2147
  • Abstract
    Co-C granular thin films with a Co content of 6.4 at.% were deposited at room temperature by co-sputtering. The magnetotransport properties of the thin films were investigated within 2-300 K under magnetic fields up to 90 kOe. A large negative magnetoresistance (MR) of 27.6% was successfully observed at 2 K. As temperature (T) increased, negative MR decreased drastically. Meanwhile, positive MR with an organic MR (OMAR)-like shape emerged in a low magnetic field region. Ordinary MR (OMR) appeared in a high magnetic field region and can be verified by MR ¿ H2 fitting. When T reached 10 K, MR became completely positive. The MR effect showed strong temperature dependence. The interesting phenomena may help us gain a new insight into the spin-dependent transport in ferromagnetic metal (FM)/amorphous-carbon (¿-C) system.
  • Keywords
    carbon; cobalt; ferromagnetic materials; granular materials; magnetic thin films; magnetoresistance; spin polarised transport; sputtered coatings; Co-C; co-sputtering; ferromagnetic metal-amorphous carbon system; granular thin films; magnetotransport; negative magnetoresistance; spin-dependent transport; temperature 2 K to 300 K; temperature dependent magnetoresistance; Amorphous magnetic materials; Magnetic field measurement; Magnetic fields; Magnetic films; Magnetic materials; Magnetic properties; Ordinary magnetoresistance; Sputtering; Temperature dependence; Transistors; Magnetic granular thin film; temperature dependence of magnetoresistance; transport mechanism;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2010.2043340
  • Filename
    5467514