Title :
Illumination effect on switching performance of a triangular-barrier resonant-tunnelling diode
Author_Institution :
Dept. of Electron. Eng., Chinese Air Force Acad., Kaohsiung, Taiwan
fDate :
4/1/2001 12:00:00 AM
Abstract :
The illumination effect on switching performance is presented for a triangular-barrier resonant-tunnelling diode (TBRDT). A δ-doped quantum well is inserted into the centre of the TBRTD. Owing to the resonant tunnelling through the miniband in the quantum well, an N-shaped negative-differential-resistance phenomenon is observed in the current-voltage characteristics. The device shows a flexible optical function related to the cap-layer conductivity and a potential barrier height which can be changed by incident light
Keywords :
electro-optical switches; resonant tunnelling diodes; semiconductor doping; semiconductor quantum wells; δ-doped quantum well; N-shaped negative-differential-resistance phenomenon; cap-layer conductivity; current-voltage characteristics; flexible optical function; illumination effect; incident light; potential barrier height; quantum well miniband; switching performance; triangular-barrier resonant-tunnelling diode;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20010068
