Title :
Barrier-width dependence of emission in triple-quantum-well broadband light-emitting diodes
Author :
Fritz, I.J. ; Hafich, M.J. ; Klem, J.F. ; Casalnuovo, S.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
1/21/1999 12:00:00 AM
Abstract :
Broadband (1.3-1.9 μm) emission has been demonstrated using triple-quantum-well light-emitting diodes fabricated from InGaAs/InGaAlAs digital alloys. Obtaining comparable emission intensities from the three wells requires careful choice of the barrier-layer thicknesses
Keywords :
light emitting diodes; 1.3 to 1.9 micron; InGaAs-InGaAlAs; InGaAs/InGaAlAs digital alloy; barrier width; broadband emission; triple quantum well light emitting diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990068
