Title :
LT-GaAs detector with 451 fs response at 1.55 μm via two-photon absorption
Author :
Erlig, H. ; Wang, S. ; Azfar, T. ; Udupa, A. ; Fetterman, H.R. ; Streit, D.C.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
1/21/1999 12:00:00 AM
Abstract :
The impulse photoresponse from low temperature (LT) grown GaAs coplanar stripline switches was measured at 1.55 μm using double sliding-contact sampling. The response was attributed to two-photon absorption as confirmed by the observed quadratic dependence of the photocurrent on average incident illumination. The devices exhibited a response full width at half maximum of 451 fs and a 3 dB bandwidth of 190 GHz, which is, to date, the fastest response measured from LT-GaAs switches at this wavelength. The response peak was linearly dependent on the applied bias and showed a strong dependence on incident field polarisation. These devices could find applications in high temporal resolution sampling at 1.55 μm
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; photoconducting switches; photodetectors; signal sampling; strip line components; two-photon processes; 1.55 micron; 190 GHz; 451 fs; GaAs; double sliding-contact sampling; impulse photoresponse; low temperature grown GaAs coplanar stripline switch; photoconductive switch; photodetector; two-photon absorption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990109
