DocumentCode
1499067
Title
Integration Challenges of Nanoporous Low Dielectric Constant Materials
Author
Kim, Taek-Soo ; Dauskardt, Reinhold H.
Author_Institution
Dept. of Mech. Eng., Stanford Univ., Stanford, CA, USA
Volume
9
Issue
4
fYear
2009
Firstpage
509
Lastpage
515
Abstract
The reliable integration of nanoporous low dielectric constant (k) materials is challenging due to their vulnerability to delamination, cohesive cracking, and diffusion. We review selected reliability issues for the integration of nanoporous low-k dielectrics regarding UV curing, diffusion, and damage evolution. Depth-dependent UV curing by the UV standing wave effect is presented. It is demonstrated that significant enhancement in fracture energies at both interfaces of low-k films can be obtained by tailoring UV curing depth profiles and employing the underlying barrier as an optical spacer. The effects of nonionic surfactants on diffusion and damage evolution in nanoporous low-k films are discussed.
Keywords
curing; dielectric materials; nanoporous materials; UV curing depth profiles; UV standing wave effect; cohesive cracking; damage evolution; depth-dependent UV curing; diffusion; fracture energy; nanoporous low dielectric constant material; nonionic surfactants; optical spacer; Dielectric films; environmental testing; failure; reliability testing; ultraviolet radiation effects;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2009.2033670
Filename
5286222
Link To Document