DocumentCode :
1499068
Title :
Generation of electromigration ground rules utilizing Monte Carlo simulation methods
Author :
Beitman, Bruce A. ; Ito, Akira
Author_Institution :
Harris Semicond., Melbourne, FL, USA
Volume :
4
Issue :
1
fYear :
1991
fDate :
2/1/1991 12:00:00 AM
Firstpage :
63
Lastpage :
66
Abstract :
A novel method is presented for determining ground rule limits for the maximum current allowed in a metal line based on the electromigration and process parameters. A Monte Carlo technique is utilized to simulate the distribution of metal width, metal thickness, and electromigration properties to determine the maximum current allowed for a given failure criterion. In linewidths of less than 6 μm, the Monte Carlo method doubles the allowed current compared to the worst-case linewidth approach. Thus, increased currents are allowed in metal lines without sacrificing predetermined reliability goals. It is also demonstrated that the accuracy of the Monte Carlo simulation is based on the number of iterations executed. Specifically, it is shown that the accuracy of the simulation is dependent on the number of outer loop iterations performed
Keywords :
Monte Carlo methods; circuit layout CAD; electromigration; metallisation; reliability; Monte Carlo simulation methods; Monte Carlo technique; design rules; distribution of metal width; electromigration ground rules generation; electromigration properties; failure criterion; maximum current allowed; metal thickness; number of outer loop iterations; reliability goals; Electromigration; Furnaces; Geometry; Land surface temperature; Optical films; Pollution measurement; Semiconductor films; Silicon; Temperature measurement; Time measurement;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.75854
Filename :
75854
Link To Document :
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