DocumentCode :
1499076
Title :
A hybrid wafer-dicing process for GaAs MMIC production
Author :
Chang, Edward Y. ; Dean, Richard ; Proctor, James ; Elmer, Robert ; Pande, Krishna
Author_Institution :
Comsat Lab., Clarksburg, MD, USA
Volume :
4
Issue :
1
fYear :
1991
fDate :
2/1/1991 12:00:00 AM
Firstpage :
66
Lastpage :
68
Abstract :
A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit manufacture; semiconductor technology; 2 in; 90 percent; GaAs chip dicing technique; MMIC production; chip dicing; flawless edges; high chip yield; hybrid wafer-dicing process; minimizes ragged chip edges; monolithic microwave integrated circuit; semiconductors; spin-on wax; wafer mounting; Chemical processes; Gallium arsenide; Gold; Hybrid integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Production; Sawing; Wet etching;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.75855
Filename :
75855
Link To Document :
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