Title :
Superconducting properties of TaN and VN films
Author :
Pan, V.M. ; Prokhorov, V.G. ; Komashko, V.A. ; Kaminsky, G.G. ; Kousenetsov, M.A. ; Tretiatchenko, C.G.
Author_Institution :
Inst. of Metal Phys., Kiev, USSR
fDate :
3/1/1989 12:00:00 AM
Abstract :
Thin superconducting TaN and VN films produced by reactive cathode sputtering have been investigated. Superconducting-phase-transition smearing in applied field seems to be due to spatial fluctuations of the electron diffusion coefficient as well as dimensional crossover of dynamical superconducting order parameter fluctuations. Flux pinning occurs at grain boundaries by electron scattering mechanism. Transition to a dissipative state is induced by flux line separation from the pins but not by flux line lattice plastic shear
Keywords :
fluctuations in superconductors; flux pinning; sputtered coatings; superconducting thin films; superconducting transition temperature; tantalum compounds; type II superconductors; vanadium compounds; TaN; VN; applied field; dimensional crossover; dissipative state; dynamical superconducting order parameter fluctuations; electron diffusion coefficient; electron scattering mechanism; flux line separation; flux pinning; grain boundaries; spatial fluctuations; sputtered superconducting films; superconducting phase transition smearing; Cathodes; Electrons; Fluctuations; Flux pinning; Grain boundaries; Lattices; Pins; Scattering; Sputtering; Superconducting films;
Journal_Title :
Magnetics, IEEE Transactions on
