Steady-state thermal uniformity and gas flow patterns in a rapid thermal processing chamber

Author

Campbell, Stephen A. ; Ahn, K.H. ; Knutson, Karson L. ; Liu, Benjamin Y H ; Leighton, John D.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

4

Issue

1

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

14

Lastpage

20

Abstract

The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas flow patterns and temperature distributions depend strongly on pressure and ambient composition. Steady-state uniformity is found to be described to first order by the radiant uniformity at the wafer surface and substrate heat flow considerations alone. For high-thermal-uniformity systems, however, convective cooling does play an important role, approximately equal to that of edge losses

Keywords

digital simulation; semiconductor technology; ambient composition; convective cooling; edge losses; experimental epitaxial growth rate data; gas flow patterns; high-thermal-uniformity systems; pressure; process conditions; radiant uniformity; rapid thermal processing chamber; rapid thermal processing system; steady-state temperature distribution; substrate heat flow considerations; temperature distributions; Cooling; Fluid flow; Heating; Lamps; Mechanical engineering; Pins; Rapid thermal processing; Steady-state; Substrates; Temperature distribution;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.75859

Filename

75859