DocumentCode
1499202
Title
Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM
Author
Lee, Kangho ; Kan, Seung H.
Author_Institution
Adv. Technol., Qualcomm Inc., San Diego, CA, USA
Volume
46
Issue
6
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
1537
Lastpage
1540
Abstract
Commercializing spin-transfer-torque magnetic random access memory (STT-MRAM) requires thorough investigation of magnetic tunnel junctions (MTJs) at temperature corners. In this paper, high-temperature behaviors of MTJs are investigated in conjunction with temperature-dependent transistor characteristics in order to ensure reliable high-temperature operation of STT-MRAM.
Keywords
MRAM devices; magnetic tunnelling; reliability; STT-MRAM; high-temperature operation; magnetic tunnel junctions; reliability; spin-transfer-torque magnetic random access memory; temperature corners; temperature-dependent transistor characteristics; Current measurement; Electrodes; Magnetic tunneling; Pulse measurements; Random access memory; Space vector pulse width modulation; Temperature dependence; Thermal stability; Tunneling magnetoresistance; Voltage; Magnetic tunnel junction; read disturb; switching current; thermal stability;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2010.2043645
Filename
5467562
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