Title :
Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM
Author :
Lee, Kangho ; Kan, Seung H.
Author_Institution :
Adv. Technol., Qualcomm Inc., San Diego, CA, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
Commercializing spin-transfer-torque magnetic random access memory (STT-MRAM) requires thorough investigation of magnetic tunnel junctions (MTJs) at temperature corners. In this paper, high-temperature behaviors of MTJs are investigated in conjunction with temperature-dependent transistor characteristics in order to ensure reliable high-temperature operation of STT-MRAM.
Keywords :
MRAM devices; magnetic tunnelling; reliability; STT-MRAM; high-temperature operation; magnetic tunnel junctions; reliability; spin-transfer-torque magnetic random access memory; temperature corners; temperature-dependent transistor characteristics; Current measurement; Electrodes; Magnetic tunneling; Pulse measurements; Random access memory; Space vector pulse width modulation; Temperature dependence; Thermal stability; Tunneling magnetoresistance; Voltage; Magnetic tunnel junction; read disturb; switching current; thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2043645
