Title :
Observation of Spin-Orbit Interaction Parameter Over a Wide Temperature Range Using Potentiometric Measurement
Author :
Park, Youn Ho ; Koo, Hyun Cheol ; Kim, Kyung Ho ; Kim, Hyung-jun ; Chang, Joonyeon ; Han, Suk Hee ; Kim, Hijung
fDate :
6/1/2010 12:00:00 AM
Abstract :
Spin-orbit interaction parameter (¿) can be obtained by measuring the Shubnikov-de Haas oscillation, but this method is valid at only very low temperature. The current induced spin polarization in a 2-D electron gas layer is measured by potentiometric geometry which measures spin dependent chemical potential shifts. Subsequently, a spin-orbit interaction parameter can be extracted up to T = 250 K. In an inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well system, a of 5.65 × 10-12 eVm and 3.85 × 10-12 eVm are obtained at T = 1.8 and 250 K, respectively.
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; chemical potential; chemical shift; gallium arsenide; indium compounds; semiconductor quantum wells; spin polarised transport; spin-orbit interactions; two-dimensional electron gas; 2D electron gas layer; In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As; Shubnikov-de Haas oscillation; current induced spin polarization; inverted quantum well system; potentiometric geometry; potentiometric measurement; spin dependent chemical potential shifts; spin-orbit interaction parameter; temperature 1.8 K; temperature 250 K; Chemical technology; Current measurement; Electrodes; Electrons; Geometry; HEMTs; Magnetic field measurement; Magnetic fields; Polarization; Temperature distribution; 2-D electron gas (2DEG); Rashba effect; potentiometric measurement; spin-orbit interaction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2045241
