• DocumentCode
    1499579
  • Title

    Resonant Switching of Two Dipole-Coupled Nanomagnets

  • Author

    Cherepov, S.S. ; Korenivski, V. ; Worledge, D.C.

  • Author_Institution
    Nanostruct. Phys., R. Inst. of Technol., Stockholm, Sweden
  • Volume
    46
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    2112
  • Lastpage
    2115
  • Abstract
    The storage layer of recently developed spin-flop magnetic random-access memory consists of two closely spaced dipole-coupled nanomagnets and is highly stable in the ground state as well as in quasistatic fields applied off the easy axis. We show experimentally and confirm by using micromagnetic simulations that these spin-flop bilayers can be switched relatively easily by dynamic fields, applied at the frequency of the optical spin resonance of the bilayer. The field amplitude sufficient for this resonant switching can be an order of magnitude lower than the fields necessary for quasistatic reversal. Our data and micromagnetic analysis suggest that thermal agitation can play a role in the observed resonant switching behavior.
  • Keywords
    ground states; magnetic switching; magnetisation reversal; micromagnetics; nanomagnetics; dipole-coupled nanomagnets; dynamic fields; field amplitude; micromagnetic analysis; micromagnetic simulations; optical spin resonance; quasistatic fields; quasistatic reversal; resonant switching; spin-flop bilayers; spin-flop magnetic random-access memory ground state; thermal agitation; Frequency; Magnetic analysis; Magnetic memory; Magnetic resonance; Magnetic separation; Magnetic switching; Micromagnetics; Physics; Space technology; Stationary state; Magnetic random-access memory (MRAM); micromagnetic simulations; resonant switching; spin-flop bilayers;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2010.2043715
  • Filename
    5467615