DocumentCode :
1499659
Title :
Methodology for electromigration critical threshold design rule evaluation
Author :
Clement, J. Joseph ; Riege, Stefan P. ; Cvijetic, Radenko ; Thompson, Carl V.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
18
Issue :
5
fYear :
1999
fDate :
5/1/1999 12:00:00 AM
Firstpage :
576
Lastpage :
581
Abstract :
We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design rules for electromigration reliability. The concept underlying critical threshold design rules is the observation that a mechanical stress-induced backflow of metal atoms is created by electromigration in interconnect lines confined by a rigid dielectric. If the steady-state balance of these two atomic fluxes is achieved before critical electromigration damage is realized, then the line can be considered to be virtually immortal with negligible reliability risk. A design rule based on this critical threshold criterion has the potential to give designers added flexibility to use currents larger than present design rules typically allow in short interconnects
Keywords :
electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; atomic flux; computer-aided design; critical threshold design rule; electromigration reliability; interconnect line; mechanical stress; nodal analysis; rigid dielectric; Aluminum; Compressive stress; Design automation; Dielectrics; Electric resistance; Electromigration; Electrons; Integrated circuit interconnections; Materials science and technology; Risk analysis;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.759073
Filename :
759073
Link To Document :
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