Title :
A Modified Doherty Power Amplifier With Extended Bandwidth and Reconfigurable Efficiency
Author :
Gustafsson, David ; Andersson, Christer M. ; Fager, Christian
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
This paper derives the theory and presents measurements of a new power amplifier based on the Doherty power amplifier topology. It is theoretically shown that the proposed amplifier can simultaneously provide high efficiency at both full output power and at output power back-off, over a much improved bandwidth compared to the conventional Doherty power amplifier. It is also shown that the proposed amplifier allows reconfiguration of the efficiency in power back-off without the need of tunable elements.
Keywords :
III-V semiconductors; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; extended bandwidth; modified Doherty power amplifier; power back-off; reconfigurable efficiency; Bandwidth; Frequency dependence; Impedance; Peak to average power ratio; Power amplifiers; Power generation; Transistors; Broadband amplifiers; Doherty; GaN; gallium nitride; high efficiency; power amplifiers; wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2227783
