Title :
High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nm
Author :
Larsson, A. ; Forouhar, S. ; Cody, J. ; Lang, R.J.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
Ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 mu m wide stripe) at a lasing wavelength of 980 nm are discussed that were fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral mode operation render these lasers suitable for pumping Er/sup 3+/-doped fiber amplifiers.<>
Keywords :
aluminium compounds; gallium arsenide; indium compounds; life testing; optical pumping; optical waveguides; semiconductor device testing; semiconductor junction lasers; semiconductor quantum wells; 105 mW; 500 h; 6 micron; 980 nm; Er/sup 3+/-doped fiber amplifiers; InGaAs-GaAs-AlGaAs; emission wavelength; fundamental lateral mode operation; graded index separate confinement heterostructure; gradual degradation; high output power; high output power densities; high quantum efficiencies; laser pumping; life testing; molecular beam epitaxy; narrow stripe pseudomorphic single quantum well lasers; ridge waveguide lasers; uncoated facet; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Life testing; Molecular beam epitaxial growth; Power generation; Power lasers; Pump lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE