Reliability of MOCVD grown AlGaAs/GaAs laser diodes at -20 C heatsink temperature

Author

Begley, D.L. ; Dreisewerd, D. ; Fritz, W. ; Schwedt, S. ; Elliott, G. ; Langill, T. ; Luft, J. ; Wudy, E.

Author_Institution

McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA

Volume

2

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

316

Lastpage

318

Abstract

Wide-stripe 808-nm laser diodes operated at constant current and at a heatsink temperature of -20 C for over 10000 h are discussed. The MOCVD-grown double-heterostructure lasers were processed with 60- mu m-wide oxide stripes and 150- mu m-long high-reflectivity passivated cavities. Devices were mounted p-side down on BeO heatsinks with indium solder. Based on gradual degradation of output power (approximately 8*10/sup -5/ mW per kilohour), a median lifetime of over 30 years is projected.<>

Keywords

III-V semiconductors; aluminium compounds; beryllium compounds; chemical vapour deposition; gallium arsenide; heat sinks; laser cavity resonators; life testing; semiconductor device testing; semiconductor junction lasers; -20 degC; 10000 h; 150 micron; 30 yr; 60 micron; 808 nm; AlGaAs-GaAs laser diodes; BeO heatsinks; In; MOCVD grown; constant current; double-heterostructure lasers; gradual degradation; heatsink temperature; high-reflectivity passivated cavities; life testing; median lifetime; output power; oxide stripes; p-side down; solder; Diode lasers; Gallium arsenide; Laser excitation; MOCVD; Optical arrays; Phased arrays; Power generation; Pump lasers; Semiconductor laser arrays; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.54691

Filename

54691