Title :
Fabrication method for multiple wavelength vertical-cavity emitter arrays by SiNx layer thickness control
Author :
Shin, Jae-Heon ; Yoo, Byueng-Su
Author_Institution :
Telecommun. Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
5/1/1999 12:00:00 AM
Abstract :
We report very narrow and equally spaced eight-channel multiple-wavelength vertical-cavity emitter arrays emitting from 855 to 862 nm with the average spacing of 0.91 nm. For the postgrowth wavelength adjustment, a binary-coded multistep ion beam etching technique is applied to control the thickness of a SiN/sub x/ tuning layer located on the first Al/sub 0.15/Ga/sub 0.85/As quarter-wave layer above the active region. Our result indicates the possibility of the precisely spaced vertical-cavity surface-emitting laser arrays using this kind of postgrowth wavelength adjustment technique.
Keywords :
III-V semiconductors; gallium arsenide; laser transitions; laser tuning; optical fabrication; quantum well lasers; semiconductor laser arrays; sputter etching; surface emitting lasers; 855 to 862 nm; Al/sub 0.15/Ga/sub 0.85/As; Al/sub 0.15/Ga/sub 0.85/As quarter-wave layer; GaAs MQW lasers; SiN/sub x/ layer thickness control; SiN/sub x/ tuning layer; VCSEL arrays; active region; binary-coded multistep ion beam etching technique; fabrication method; multiple wavelength vertical-cavity emitter arrays; postgrowth wavelength adjustment; postgrowth wavelength adjustment technique; precisely spaced vertical-cavity surface-emitting laser arrays; very narrow equally spaced eight-channel multiple-wavelength vertical-cavity emitter arrays; Etching; Fabrication; Ion beams; Laser tuning; Optical arrays; Silicon compounds; Surface emitting lasers; Surface waves; Thickness control; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
