Tradeoff between phase- and intensity modulation in GaAs/AlGaAs double heterostructure and multiple quantum well phase-modulator waveguides

Author

Valliath, G.T. ; Lengyel, G. ; Wolf, H.D. ; Korte, L. ; Kristen, G.

Author_Institution

Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA

Volume

2

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

340

Lastpage

342

Abstract

The wavelength dependence of phase sensitivity ( degrees /mm V) and intensity modulation of a double-heterostructure (DH) device and a multiquantum-well (MQW) device in the GaAs/AlGaAs material system is studied. The results show the tradeoff between phase modulation and intensity modulation and also show that, for the same intensity modulation, the MQW device produces twice as much phase modulation as the DH device. For example, at an intensity modulation of -1 dB the MQW device has a phase sensitivity of 120 degrees /mm V while the DH device gives a value of approximately=60 degrees /mm V.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical modulation; optical waveguides; phase modulation; semiconductor quantum wells; sensitivity; GaAs-AlGaAs; double heterostructure; intensity modulation; multiple quantum well phase-modulator waveguides; optical modulation; phase modulation; phase sensitivity; wavelength dependence; DH-HEMTs; Gallium arsenide; Intensity modulation; Low earth orbit satellites; Optical waveguides; PIN photodiodes; Phase modulation; Photonic band gap; Quantum well devices; Semiconductor materials;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.54699

Filename

54699