Laser-assisted selective chemical etching for active trimming of GaAs waveguide devices

Author

Brown, Rober T.

Author_Institution

United Technol. Res. Center, East Hartford, CT, USA

Volume

2

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

346

Lastpage

348

Abstract

A technique for active trimming of GaAs channel waveguides using diode-laser-assisted wet chemical etching is described. Using this technique, the relative transmission through one leg of a 1.3 mu m directional coupler was varied from 0.1 to 0.8 in a controllable manner. The trimming process, which is carried out while a probe signal is transmitted through the device, can be used to correct for normal fabrication errors and can eliminate the requirement for DC bias voltages in devices such as modulators and switches.<>

Keywords

III-V semiconductors; directional couplers; etching; gallium arsenide; integrated optics; optical couplers; optical waveguides; optical workshop techniques; 1.3 micron; DC bias voltages; GaAs waveguide devices; active trimming; channel waveguides; diode-laser-assisted wet chemical etching; directional coupler; fabrication errors; integrated optics; optical modulators; optical switches; probe signal; relative transmission; Chemical lasers; Diodes; Directional couplers; Fabrication; Gallium arsenide; Leg; Probes; Signal processing; Waveguide lasers; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.54701

Filename

54701