Title :
Low-loss 1×2 multimode interference wavelength demultiplexer in silicon-germanium alloy
Author :
Baojun Li ; Guozheng Li ; Enke Liu ; Zuimin Jiang ; Jie Qin ; Xun Wang
Author_Institution :
Surface Phys. Lab., Fudan Univ., Shanghai, China
fDate :
5/1/1999 12:00:00 AM
Abstract :
A low-loss multimode interference wavelength demultiplexer for 1.3- and 1.55-μm operations based on the silicon-germanium alloy material has been proposed and demonstrated. The device was fabricated by molecular beam epitaxy followed by lithography and plasma etching. The input/output facets were polished mechanically. The measured insertion losses are 4.29 and 4.28 dB and the extinction ratios are 25 and 22 dB at 1.3 and 1.55 μm, respectively.
Keywords :
Ge-Si alloys; demultiplexing equipment; etching; lithography; molecular beam epitaxial growth; optical communication equipment; optical fabrication; optical losses; polishing; 1.3 mum; 1.55 mum; 4.28 dB; 4.29 dB; Ge-Si; extinction ratios; input facets; lithography; low-loss 1/spl times/2 multimode interference wavelength demultiplexer; measured insertion losses; mechanically polished; molecular beam epitaxy; output facets; plasma etching; silicon-germanium alloy; Germanium silicon alloys; Interference; Lithography; Molecular beam epitaxial growth; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Silicon alloys; Silicon germanium;
Journal_Title :
Photonics Technology Letters, IEEE
