Low-loss 1×2 multimode interference wavelength demultiplexer in silicon-germanium alloy

Author

Baojun Li ; Guozheng Li ; Enke Liu ; Zuimin Jiang ; Jie Qin ; Xun Wang

Author_Institution

Surface Phys. Lab., Fudan Univ., Shanghai, China

Volume

11

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

575

Lastpage

577

Abstract

A low-loss multimode interference wavelength demultiplexer for 1.3- and 1.55-μm operations based on the silicon-germanium alloy material has been proposed and demonstrated. The device was fabricated by molecular beam epitaxy followed by lithography and plasma etching. The input/output facets were polished mechanically. The measured insertion losses are 4.29 and 4.28 dB and the extinction ratios are 25 and 22 dB at 1.3 and 1.55 μm, respectively.

Keywords

Ge-Si alloys; demultiplexing equipment; etching; lithography; molecular beam epitaxial growth; optical communication equipment; optical fabrication; optical losses; polishing; 1.3 mum; 1.55 mum; 4.28 dB; 4.29 dB; Ge-Si; extinction ratios; input facets; lithography; low-loss 1/spl times/2 multimode interference wavelength demultiplexer; measured insertion losses; mechanically polished; molecular beam epitaxy; output facets; plasma etching; silicon-germanium alloy; Germanium silicon alloys; Interference; Lithography; Molecular beam epitaxial growth; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Silicon alloys; Silicon germanium;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.759403

Filename

759403