• DocumentCode
    1500306
  • Title

    Growth and properties of sputtered high-Tc oxide thin films

  • Author

    Char, K. ; Hahn, M.R. ; Hylton, T.L. ; Beasley, M.R. ; Geballe, T.H. ; Kapitulnik, A.

  • Author_Institution
    Dept. of Appl. Phys., Stanford Univ., CA, USA
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    2422
  • Lastpage
    2425
  • Abstract
    Superconducting YBa2Cu3O7-x films of thicknesses ranging from 500 Å to 5 μm have been successfully made by the reactive magnetron sputtering technique. The effects of composition, annealing condition, and thickness of an epitaxial film on its orientation are discussed. films show anisotropic resistivities and critical-current densities that are orientation-dependent
  • Keywords
    annealing; barium compounds; critical current density (superconductivity); electrical conductivity of crystalline semiconductors and insulators; high-temperature superconductors; sputter deposition; superconducting thin films; vapour phase epitaxial growth; yttrium compounds; 500 Å to 5 micron; YBa2Cu3O7-x films; anisotropic resistivities; annealing condition; composition; critical-current densities; epitaxial film; film growth; high temperature superconductors; orientation dependence; reactive magnetron sputtering technique; sputtered high-Tc oxide thin films; thickness; Fluid flow; Plasma measurements; Plasma sources; Plasma temperature; Semiconductor films; Solvents; Sputtering; Substrates; Superconducting films; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92795
  • Filename
    92795