DocumentCode
1500306
Title
Growth and properties of sputtered high-Tc oxide thin films
Author
Char, K. ; Hahn, M.R. ; Hylton, T.L. ; Beasley, M.R. ; Geballe, T.H. ; Kapitulnik, A.
Author_Institution
Dept. of Appl. Phys., Stanford Univ., CA, USA
Volume
25
Issue
2
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
2422
Lastpage
2425
Abstract
Superconducting YBa2Cu3O7-x films of thicknesses ranging from 500 Å to 5 μm have been successfully made by the reactive magnetron sputtering technique. The effects of composition, annealing condition, and thickness of an epitaxial film on its orientation are discussed. films show anisotropic resistivities and critical-current densities that are orientation-dependent
Keywords
annealing; barium compounds; critical current density (superconductivity); electrical conductivity of crystalline semiconductors and insulators; high-temperature superconductors; sputter deposition; superconducting thin films; vapour phase epitaxial growth; yttrium compounds; 500 Å to 5 micron; YBa2Cu3O7-x films; anisotropic resistivities; annealing condition; composition; critical-current densities; epitaxial film; film growth; high temperature superconductors; orientation dependence; reactive magnetron sputtering technique; sputtered high-Tc oxide thin films; thickness; Fluid flow; Plasma measurements; Plasma sources; Plasma temperature; Semiconductor films; Solvents; Sputtering; Substrates; Superconducting films; X-ray diffraction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.92795
Filename
92795
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