Title :
Leakage-current-induced hot-carrier degradation of p-channel MOSFETs
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Leakage-current-induced hot-carrier effects have been observed during stressing of p-channel MOSFETs in the OFF state with V/sub GS/>0 V and V/sub DS/<0 V. This mode of stressing results in increased leakage current and a positive shift in the value of V/sub GS/, corresponding to the onset of avalanche breakdown of the drain junction. These effects are related to generation of interface states near the drain in forward-mode operation. By comparison, conventional stressing in the ON state with V/sub GS/<0 V and V/sub DS/<0 V resulted in little change in these p-channel MOSFET characteristics.<>
Keywords :
hot carriers; impact ionisation; insulated gate field effect transistors; leakage currents; avalanche breakdown; drain junction; forward-mode operation; hot-carrier degradation; interface state generation; leakage current increase; leakage current induced hot carrier effects; p-channel MOSFETs; stressing; Avalanche breakdown; Degradation; Hot carrier effects; Hot carriers; Interface states; Leakage current; MOSFETs; Stress; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
