High Tc BiSrCaCuO superconductor grown by CVD technique

Single-crystal high-T_c BiSrCaCuO films were grown on (100) MgO substrates in an open-tube chemical-vapor deposition (CVD) system using metal-halide sources and oxygen gas. The morphology of the BiSrCaCuO superconducting layers and MgO insulating layers was satisfactory. The resistivities of the high-T_c layers at 300 K and critical temperatures were ρ=5-20 mΩ-cm and T_c=70-80 K for Bi₁Sr_0.8Ca ₁Cu_3.7O_x layers 0.1-to-0.3-μm thick on MgO substrates. The CVD system and characteristics of the high-T _c layers and MgO heteroepitaxial layers as a substrate are discussed