DocumentCode :
1500487
Title :
Latest Developments of High-Efficiency Micromorph Tandem Silicon Solar Cells Implementing Innovative Substrate Materials and Improved Cell Design
Author :
Meillaud, Fanny ; Billet, A. ; Battaglia, Corsin ; Boccard, Mathieu ; Bugnon, Gregory ; Cuony, P. ; Charriere, M. ; Despeisse, Matthieu ; Ding, Lixin ; Escarre-palou, J. ; Hanni, Simon ; Lofgren, L. ; Nicolay, S. ; Parascandolo, G. ; Stückelberger, Michae
Author_Institution :
Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne, Switzerland
Volume :
2
Issue :
3
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
236
Lastpage :
240
Abstract :
We report on the latest research developments of micromorph (amorphous/microcrystalline) tandem silicon solar cells in our laboratory. We show that an improved cell design based on the use of silicon-oxide-doped layers permits high efficiencies on substrates that are usually considered as inappropriate for microcrystalline silicon (μc-Si:H) growth. Furthermore, advanced superstrates have recently been developed based on, e.g., multiscales textures, ultraviolet nanoimprint lithography, and bilayers, leading to very promising results. While efficiencies of 12.7% initial and 11.3% stable were achieved with a bottom cell that is only 1.1 μm thick on a rough front zinc oxide electrode, a high 12% initial efficiency was also reached on a textured replica. Our lab also placed emphasis on increasing the deposition rate of μc-Si:H, and we observed that high depletion conditions lead to dense, high-quality material. So far, conversion efficiencies up to 8.5% have been achieved with single-junction 1.8-μm-thick μc-Si:H solar cells deposited at 1 nm/s. We also report a promising initial efficiency of 12.1% for a micromorph cell with a 1-μm-thick bottom cell, for which the absorber layer was grown at 1 nm/s.
Keywords :
Glass; Photovoltaic cells; Photovoltaic systems; Silicon; Substrates; Zinc oxide; Light trapping; solar cells; thin-film silicon;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2191139
Filename :
6187839
Link To Document :
بازگشت