DocumentCode :
1500489
Title :
Dynamic Supply and Threshold Voltage Scaling for CMOS Digital Circuits Using In-Situ Power Monitor
Author :
Mehta, Nandish ; Amrutur, Bharadwaj
Author_Institution :
Dept. of Electr. Commun. Eng., Indian Inst. of Sci., Bangalore, India
Volume :
20
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
892
Lastpage :
901
Abstract :
A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynamic control of supply voltage and the body bias is proposed. A direct power monitoring scheme is proposed that does not need any replica and hence can sense total power consumed by load circuit across process, voltage, and temperature corners. Design details and performance of power monitor and tracking algorithm are examined by a simulation framework developed using UMC 90-nm CMOS triple well process. The proposed algorithm with direct power monitor achieves a power savings of 42.2% for activity of 0.02 and 22.4% for activity of 0.04. Experimental results from test chip fabricated in AMS 350 nm process shows power savings of 46.3% and 65% for load circuit operating in super threshold and near sub-threshold region, respectively. Measured resolution of power monitor is around 0.25 mV and it has a power overhead of 2.2% of die power. Issues with loop convergence and design tradeoff for power monitor are also discussed in this paper.
Keywords :
CMOS digital integrated circuits; nanoelectronics; power supplies to apparatus; AMS 350 nm process; CMOS digital circuit; UMC 90-nm CMOS triple well process; generalized power tracking algorithm; in-situ power monitor; load circuit; load circuit across process; power consumption; power monitoring scheme; power saving; size 90 nm; supply voltage; threshold voltage scaling; Delay; Monitoring; Power measurement; Temperature measurement; Temperature sensors; Threshold voltage; Voltage control; ${V}_{rm DD}-{V}_{rm TH}$ control; CMOS; dynamic voltage and threshold scaling (DVTS); in-situ power monitor; leakage current control; low power; power optimum point; sleep transistor; variable body bias; variable supply voltage;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2011.2132765
Filename :
5753985
Link To Document :
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