Title :
Leakage current degradation in n-MOSFETs due to hot-electron stress
Author :
Duvvury, Charvaka ; Redwine, Donald J. ; Stiegler, Harvey J.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The field-induced drain-leakage current can become significant in NMOS devices with thin gate oxides. This leakage current component is found to be more prominent in devices with gate-drain overlap and can increase considerably with hot-electron stress. A method which shows how measuring the gate voltage needed to obtain a constant leakage value of 0.1 nA can yield useful information on the interface charge trap density is discussed.<>
Keywords :
field effect integrated circuits; hot carriers; insulated gate field effect transistors; leakage currents; 0.1 nA; NMOS devices; field-induced drain-leakage current; gate voltage measurement; gate-drain overlap; hot-electron stress; interface charge trap density; thin gate oxides; Current measurement; Degradation; Hot carriers; Instruments; Leakage current; MOS devices; MOSFET circuits; Stress; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
