Title :
Theory and experiment of In1-xGaxAsy P1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers
Author :
Minch, J. ; Park, S.-H. ; Keating, T. ; Chuang, S.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
We present a comprehensive model for the calculation of the bandedge profile of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well systems with an arbitrary composition. Using a many-body optical gain model, we compare the measured net modal gain for both material systems with calculations from the realistic band structure including valence band mixing effects. Calibrated measurements of the side light spontaneous emission spectrum based on its fundamental relation to the optical gain spectrum give values for the radiative current density. These measurements allow us to extract the relationship between total current density and carrier density. A fit of this relation yields values for the Auger coefficient for each material system
Keywords :
III-V semiconductors; aluminium compounds; calibration; carrier density; current density; gallium arsenide; indium compounds; laser theory; quantum well lasers; semiconductor device models; spontaneous emission; valence bands; Auger coefficient; In1-x-yGaxAlyAs; In1-xGaxAsyP1-y; InGaAlAs; InGaAsP; arbitrary composition; bandedge profile; calibrated measurements; carrier density; comprehensive model; long-wavelength strained quantum-well lasers; many-body optical gain model; material system; material systems; net modal gain; optical gain spectrum; radiative current density; realistic band structure; total current density; valence band mixing effects; Charge carrier density; Current density; Current measurement; Density measurement; Gain measurement; Optical materials; Optical mixing; Quantum wells; Spontaneous emission; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
