Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition

Author

Wong, M. ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

9

Issue

11

fYear

1988

Firstpage

582

Lastpage

584

Abstract

RF plasma-enhanced chemical vapor deposition (PECVD) has been used to deposit blanket tungsten on silicon dioxide for MOS gate formation. A range of deposition conditions are investigated. A postdeposition high-temperature anneal is necessary to reduce the resistivity and improve the adhesion of the film. Capacitors fabricated with the tungsten gate show good electrical properties with no apparent detrimental effects caused by the presence of either the plasma or fluorine during the deposition.<>

Keywords

MOS integrated circuits; annealing; insulated gate field effect transistors; integrated circuit technology; metallisation; plasma CVD; plasma CVD coatings; semiconductor technology; tungsten; IC fabrication; MOS gate formation; PECVD; RF plasma-enhanced CVD; W-SiO/sub 2/; chemical vapor deposition; deposition conditions; electrical properties; metallisation; postdeposition high-temperature anneal; semiconductor technology; Adhesives; Annealing; Chemical vapor deposition; Conductivity; MOS capacitors; Plasma chemistry; Plasma properties; Radio frequency; Silicon compounds; Tungsten;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.9283

Filename

9283