Title :
Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition
Author :
Wong, M. ; Saraswat, Krishna C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
RF plasma-enhanced chemical vapor deposition (PECVD) has been used to deposit blanket tungsten on silicon dioxide for MOS gate formation. A range of deposition conditions are investigated. A postdeposition high-temperature anneal is necessary to reduce the resistivity and improve the adhesion of the film. Capacitors fabricated with the tungsten gate show good electrical properties with no apparent detrimental effects caused by the presence of either the plasma or fluorine during the deposition.<>
Keywords :
MOS integrated circuits; annealing; insulated gate field effect transistors; integrated circuit technology; metallisation; plasma CVD; plasma CVD coatings; semiconductor technology; tungsten; IC fabrication; MOS gate formation; PECVD; RF plasma-enhanced CVD; W-SiO/sub 2/; chemical vapor deposition; deposition conditions; electrical properties; metallisation; postdeposition high-temperature anneal; semiconductor technology; Adhesives; Annealing; Chemical vapor deposition; Conductivity; MOS capacitors; Plasma chemistry; Plasma properties; Radio frequency; Silicon compounds; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
