Title :
Characteristics of Wavelength-Tunable Harmonically Mode-Locked Short-Cavity Fiber Ring Laser Using a Bismuth-Oxide-Based Erbium-Doped Fiber and a Bismuth-Oxide-Based Highly Nonlinear Fiber
Author :
Fukuchi, Yutaka ; Maeda, Joji
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ. of Sci., Tokyo, Japan
fDate :
7/1/2012 12:00:00 AM
Abstract :
We propose and experimentally demonstrate a wavelength-tunable harmonically mode-locked short-cavity fiber ring laser, employing a 151-cm-long bismuth-oxide-based erbium-doped fiber (Bi-EDF) and a 414-cm-long bismuth-oxide-based highly nonlinear fiber (Bi-HNLF). A 75-nm continuous wavelength tuning from 1535 to 1610 nm can be achieved by utilizing the wide gain bandwidth of the Bi-EDF. Ultra-high nonlinearity of the Bi-HNLF collaborates with spectral filtering by an optical bandpass filter to suppress the supermode noise quite effectively. Total length of the ring cavity including all optical components is as short as 10 m. Back-to-back bit-error-rate measurements also confirm bit-error-free operation throughout the entire wavelength tuning range.
Keywords :
band-pass filters; bismuth compounds; erbium; error statistics; fibre lasers; laser beams; laser cavity resonators; laser mode locking; laser noise; laser tuning; nonlinear optics; optical filters; ring lasers; Bi-EDF; Bi-HNLF; Bi2O3; Bi2O3:Er; back-to-back bit-error-rate measurements; bismuth-oxide-based erbium-doped fiber; bismuth-oxide-based highly nonlinear fiber; bit-error-free operation throughout; continuous wavelength tuning; optical bandpass filter; optical components; ring cavity length; size 151 cm; size 414 cm; spectral filtering; supermode noise; ultrahigh nonlinearity; wavelength 1535 nm to 1610 nm; wavelength tuning; wavelength-tunable harmonically mode-locked short-cavity fiber ring laser; wide gain bandwidth; Cavity resonators; Laser mode locking; Laser tuning; Noise; Optical pulses; Ring lasers; Mode locked lasers; noise; optical fiber lasers; rare-earth materials; wavelength tuning;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2195638