Title :
Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region
Author :
Morizuka, Kouhei ; Katoh, Riichi ; Asaka, Masayuki ; Iizuka, Norio ; Tsuda, Kunio ; Obara, Masao
Author_Institution :
Toshiba Res. & Dev. Centre, Kawasaki, Japan
Abstract :
The effect of electron-velocity overshoot in a p-type GaAs collector on the transit-time reduction of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) is investigated. A cutoff frequency improvement of about 30% over the conventional n-type GaAs collector was obtained in p-type collector HBTs for the same collector depletion-layer width. A significant increase in electron velocity in the p-type GaAs collector layer was confirmed by a simple analysis.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; GaAs collector; HBTs; cutoff frequency improvement; electron-velocity overshoot; heterojunction bipolar transistors; p-type collector region; transit-time reduction; Character recognition; Cutoff frequency; Delay effects; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Particle scattering; Predictive models; Research and development; Steady-state;
Journal_Title :
Electron Device Letters, IEEE
