Title :
Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices
Author :
Chang, Chi ; Haddad, Sameer ; Swaminathan, Balaji ; Lien, Jih
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Leakage current components due to band-to-band tunneling and avalanche breakdown in thin-oxide (90-160 AA) gated-diode structures are discussed. Experimental results show that while the band-to-band tunneling current is not sensitive to channel doping concentration, the avalanche current is sensitive to channel doping concentration in the range of 10/sup 16/ to 10/sup 17/ cm/sup -3/. For oxides thicker than 110 AA, the gate current is found to be dominated by hot-hole injection and for oxides thinner than 110 AA the gate current is dominated by Fowler-Nordheim electron tunneling. After hot-hole injection, the gate oxide exhibits significant low-level leakage, which is explained by the barrier-lowering effect caused by the trapped holes in the oxide.<>
Keywords :
hole traps; impact ionisation; leakage currents; metal-insulator-semiconductor devices; tunnelling; 90 to 160 AA; Fowler-Nordheim electron tunneling; avalanche breakdown; avalanche current; band-to-band tunneling; barrier-lowering effect; channel doping concentration; drain avalanche; hole-trapping induced gate leakage; hot-hole injection; low-level leakage; thin-oxide MOS devices; thin-oxide gated diode structures; Avalanche breakdown; Current measurement; Doping; Electrons; Gate leakage; Hot carriers; Leakage current; MOS devices; Nonvolatile memory; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
